junction capacitance

ёмкость (p-n-)перехода

Англо-русский словарь технических терминов. 2005.

Смотреть что такое "junction capacitance" в других словарях:

  • collector-junction capacitance — kolektoriaus sandūros talpa statusas T sritis radioelektronika atitikmenys: angl. collector junction capacitance vok. Kollektor Basis Kapazität, f rus. ёмкость коллекторного перехода, f pranc. capacité de jonction collecteur base, f …   Radioelektronikos terminų žodynas

  • Capacitance voltage profiling — The CV , or more correctly C V , in C V profiling, stands for capacitance voltage, and refers to a technique used for characterization of semiconductor materials and devices. The technique uses a metal semiconductor junction (Schottky barrier) or …   Wikipedia

  • Diffusion capacitance — is the capacitance due to transport of charge carriers between two terminals of a device, for example, the diffusion of carriers from anode to cathode in forward bias mode of a diode or from emitter to base (forward biased junction in active… …   Wikipedia

  • p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… …   Wikipedia

  • P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… …   Wikipedia

  • Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

  • Diode modelling — In electronics, diode modelling refers to the mathematical models used to approximate the actual behavior of real diodes to enable calculations and circuit analysis. A diode s I V curve is nonlinear (it is well described by the Shockley diode… …   Wikipedia

  • ГОСТ 25529-82: Диоды полупроводниковые. Термины, определения и буквенные обозначения параметров — Терминология ГОСТ 25529 82: Диоды полупроводниковые. Термины, определения и буквенные обозначения параметров оригинал документа: 87. Временная нестабильность напряжения стабилизации стабилитрона D. Zeitliche Instabilitat der Z Spannung der Z… …   Словарь-справочник терминов нормативно-технической документации

  • Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) …   Wikipedia

  • Nantenna — Figure 1. Spectral irradiance of wavelengths in the solar spectrum. The red shaded area shows the irradiance at sea level. There is less irradiance at sea level due to absorption of light by the atmosphere. A nantenna (nanoantenna) is a… …   Wikipedia

  • capacity — Synonyms and related words: IQ, SRO, ability, ableness, accommodation, acumen, address, adeptness, adequacy, adroitness, airmanship, amplitude, apprehension, aptitude, artfulness, artisanship, artistry, bellyful, bent, brains, bravura, brilliance …   Moby Thesaurus

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